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G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
Manufacturer: GeneSiC SemiconductorIC code: 1242-G2R1000MT17D-ND
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Description
N-Channel 1700 V 5A (Tc) 44W (Tc) Through Hole TO-247-3
Specifications
- Mfr
- GeneSiC Semiconductor
- Grade
- -
- Series
- G2R™
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- +25V, -10V
- Technology
- SiCFET (Silicon Carbide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Qualification
- -
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 5.5V @ 500µA
- Base Product Number
- G2R1000
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2Ohm @ 2A, 20V
- Power Dissipation (Max)
- 44W (Tc)
- Supplier Device Package
- TO-247-3