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GT080N10TI
N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Manufacturer: Goford SemiconductorIC code: 3141-GT080N10TI-ND
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Description
N-Channel 100 V 65A (Tc) 100W (Tc) Through Hole TO-220
Specifications
- Mfr
- Goford Semiconductor
- Grade
- -
- Series
- -
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Qualification
- -
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8mOhm @ 20A, 10V
- Power Dissipation (Max)
- 100W (Tc)
- Supplier Device Package
- TO-220
- Gate Charge (Qg) (Max) @ Vgs
- 35 nC @ 10 V