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ULN2804APG,N
TRANS 8NPN DARL 50V 500MA 18DIP
Manufacturer: Toshiba Semiconductor and StorageIC code: ULN2804APGN-ND
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Description
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 760mW Through Hole 18-DIP
Specifications
- Grade
- -
- Series
- -
- Packaging
- Tube
- Part Status
- Obsolete
- Power - Max
- 760mW
- Manufacturer
- Toshiba Semiconductor and Storage
- Mounting Type
- Through Hole
- Qualification
- -
- Package / Case
- 18-DIP (0.300", 7.62mm)
- Transistor Type
- 8 NPN Darlington
- Base Product Number
- ULN2804
- Operating Temperature
- -40°C ~ 85°C (TA)
- Frequency - Transition
- -
- Supplier Device Package
- 18-DIP
- Vce Saturation (Max) @ Ib, Ic
- 1.6V @ 500µA, 350mA
- Current - Collector (Ic) (Max)
- 500mA
- Current - Collector Cutoff (Max)
- -